Atomic Layer Deposition of SrTiO3 Thin Films with Highly Enhanced Growth Rate for Ultrahigh Density Capacitors

Study on Initial Growth Behavior of RuO2 Film Grown by Pulsed Chemical Vapor Deposition: Effects of Substrate and Reactant Feeding Time

Capacitors with an Equivalent Oxide Thickness of < 0.5 nm for Nanoscale Electronic Semiconductor Memory

Atomic layer deposition and electrical properties of SrTiO3 thin films grown using Sr(C11H19O2)(2), Ti(Oi-C3H7)(4), and H2O

Al-doped TiO2 films with ultralow leakage currents for next generation DRAM capacitors

The mechanism for the suppression of leakage current in high dielectric TiO2 thin films by adopting ultra-thin HfO2 films for memory application

Schottky diode with excellent performance for large integration density of crossbar resistive memory

Permittivity Enhanced Atomic Layer Deposited HfO2 Thin Films Manipulated by a Rutile TiO2 interlayer

Electrically Benign Ru Wet Etching Method for Fabricating Ru/TiO2/Ru Capacitor

Electronic Conduction Mechanism of SrTiO3 Thin Film Grown on Ru Electrode by Atomic Layer Deposition

Investigation on the Growth Initiation of Ru Thin Films by Atomic Layer Deposition

Effect of crystalline structure of TiO2 substrates on initial growth of atomic layer deposited Ru thin films